rev. a /0 mar .20 1 2 WFY03DN50 WFY03DN50 WFY03DN50 WFY03DN50 t22 - 1 cop yright@win s emi mircroeletronicx co.,ltd.,all rights reserved. 500 500 500 500 v v v v n n n n ? ? ? ? channel channel channel channel depletion-mode depletion-mode depletion-mode depletion-mode d d d d mosfet mosfet mosfet mosfet features features features features 30m a, 50 0v, r ds(on) (max 750 )@v gs = 0,i d =3.0ma free from secondary breakdown low power drive requirement integral source-drain diode ease of paralleling excellent thermal stability high input impedance and low c iss general general general general description description description description the WFY03DN50 is a high voltage n-channel depletion mode (normally-on) transistor utilizing winsemi s lateral dmos technology. the WFY03DN50 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification. absolute absolute absolute absolute maximum maximum maximum maximum ratings ratings ratings ratings ( tc=25 unless otherwise noted) symbol parameter value units v dss drain source voltage 50 0 v i d continuous drain current (note 1 ) 30 m a t c= 7 5 24 i dm drain current pulsed 120 ma p d total power dissipation 0. 5 w v gs gate to source voltage 20 v dv/dt peak diode recovery voltage r ising r ate 5 v /ns t j, junction temperature 150 t stg storage temperature -55~150 t l maximum lead temperature for soldering purposes 30 0 maximum ratings are those values beyond which device damage can occur.maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal thermal thermal thermal characteristics characteristics characteristics characteristics symbol parameter value units min typ max r qja thermal resistance, junction-to-ambient (note 2 ) - - 250 /w r qj c thermal resistance, junction-to- case (note 2 ) 200 /w note 1 : i d (continuous) is limited by max rated tj . note 2 :mounted on fr4 board, 25mm x 25mm x 1.57mm d d d d g g g g s s s s sot-23 sot-23 sot-23 sot-23
2 / 5 WFY03DN50 WFY03DN50 WFY03DN50 WFY03DN50 steady, steady, steady, steady, keep keep keep keep for for for for your your your your advance advance advance advance electrical electrical electrical electrical characteristics characteristics characteristics characteristics (tc = 25 c) characteristics symbol test condition min type max unit off characteristics gate leakage current i gss v gs = 20 v, v ds = 0 v - - 100 na drain cut ? off current i dss v ds = 500 v, v gs = -5 v - - 0. 1 a tc=125 c 10 drain ? source breakdown voltage v (br)dss i d = 250 a, v gs = 0 v 5 0 0 - - v o n characteristics drain on-sta current i d v ds = 25v v gs = 0v 1 - - ma gate -source off voltage v gs( off ) v ds = 25v i d = 100n a -3 -2 -1 v drain ? s ource on resistance r ds(on) v gs = 0 v, i d = 0.5m a - 350 750 ? v gs = 10 v, i d = 16m a 360 850 dynamic characteristics forward transconductance gfs v ds = 0 v, i d = 1m a 1 2 - m s input capacitance c iss v gs = -10v, v ds = 25v, f = 1.0mhz - 7.5 10 pf reverse transfer capacitance c rss - 0.5 1.0 output capacitance c oss - 2.0 3.5 switching characteristics switching time (note 4 ) turn-on delay time t d(on) i d = 10m a v dd = 300v v gs = -5 ~ 7v r g = 6.0 - 6.2 - ns turn ? on rise time t r - 53 - turn-off delay time t d(off) - 56 - turn ? off fall time t f - 128 - total gate charge qg i d = 10m a v dd =400v v gs = -5v ~ 5v - 1.1 - nc gate ? source charge qgs - 0.5 - gate ? drain ( miller ) charge qgd - 0.3 - source source source source ? ? ? ? drain drain drain drain ratings ratings ratings ratings and and and and characteristics characteristics characteristics characteristics (ta = 25 c) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 25 m a pulse drain reverse current i drp - - - 100 m a forward voltage (diode) v dsf i dr = 1m a, v gs = -10 v - 0. 76 0.9 v reverse recovery time trr i dr = 1m a, v gs = -10 v di dr /dt=100a/us - 200 - ns reverse recovery charge qrr - 636 - nc reverse recovery c urrent i rrm - 5.3 - a note 3 : pulse test: pulse width 300 s, duty cycle 3 2%. note 4 : switching characteristics are independent of operating junction temperature. this transistor is an electrostatic sensitive device please handle with caution
3 / 5 WFY03DN50 WFY03DN50 WFY03DN50 WFY03DN50 steady, steady, steady, steady, keep keep keep keep for for for for your your your your advance advance advance advance typical typical typical typical performance performance performance performance cures cures cures cures
4 / 5 WFY03DN50 WFY03DN50 WFY03DN50 WFY03DN50 steady, steady, steady, steady, keep keep keep keep for for for for your your your your advance advance advance advance
5 / 5 WFY03DN50 WFY03DN50 WFY03DN50 WFY03DN50 steady, steady, steady, steady, keep keep keep keep for for for for your your your your advance advance advance advance sot-23 sot-23 sot-23 sot-23 package package package package dimension dimension dimension dimension dim dim dim dim millimters millimters millimters millimters inches inches inches inches min min min min max max max max min min min min max max max max a 0.95 0.037 a1 1.90 0.074 b 2.60 3.00 0.102 0.118 c 1.40 1.70 0.055 0.067 d 2.80 3.10 0.110 0.122 e 1.00 1.30 0.039 0.051 f 0.00 0.10 0.000 0.004 g 0.35 0.50 0.014 0.020 h 0.10 0.20 0.004 0.008 i 0.30 0.60 0.012 0.024 j 50 o 10 o 50 o 10 o
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